AP9973GS_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Single Drive Requirement

Advanced Power
Electronics Corp.
AP9973GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Surface Mount Package
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
60V
80mΩ
14A
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9973GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
60
+20
14
9
40
27
0.22
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
40
62
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200901063