AP9972GR-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP9972GR-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
60V
R_DS(ON)
18mΩ
G
I_D
60A
S
Description
AP9972 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
DS
TO-262(R)
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
60
V
+25
V
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy³
Avalanche Current³
Storage Temperature Range
Operating Junction Temperature Range
60
A
38
A
230
A
89
W
45
mJ
30
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
62
Units
℃/W
℃/W
1
201408284