AP9972AGR-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Single Drive Requirement

Advanced Power
Electronics Corp.
AP9972AGR-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Performance
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such as
DC/DC converters.
BV_DSS
R_DS(ON)
I_D
G
D
S
60V
16mΩ
60A
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
60
38
240
89
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
62
Units
℃/W
℃/W
1
201109151