AP9962AGD Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP9962AGD
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
▼ PDIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
40V
25mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Rating
40
+20
7
5.5
20
2
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200810282