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AP9960GD_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Speed | |||
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Advanced Power
Electronics Corp.
AP9960GD
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low On-Resistance
â¼ Fast Switching Speed
â¼ PDIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
G1
cost-effectiveness.
BVDSS
RDS(ON)
ID
D1
G2
S1
40V
25mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
40
± 20
7
5.6
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
62.5
Unit
â/W
Data and specifications subject to change without notice
200528031
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