AP9938GEYT-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Good Thermal Performance

Advanced Power
Electronics Corp.
AP9938GEYT-HF
Halogen-Free Product
DUAL N CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK^® 3x3
AP9938 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ^® 3x3 is special for voltage conversion application
using standard infrared reflow technique with the backside heat
sink to achieve the good thermal performance.
BV_DSS
R_DS(ON)
I_D
20V
16mΩ
10A
D1/D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+8
10
8
30
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201210172