AP9938GEY-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Lower on-resistance

Advanced Power
Electronics Corp.
AP9938GEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower on-resistance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
D1/D2
2928-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
The 2928-8 J-lead package provides good on-resistance
S1
performance and space saving like TSOP-6.
20V
16mΩ
7.5A
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
20
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+8
V
7.5
A
6
A
40
A
1.38
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201501273