AP9938GEO-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low on-resistance

Advanced Power
Electronics Corp.
AP9938GEO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low on-resistance
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
▼ Halogen Free & RoHS Compliant Product
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BV_DSS
R_DS(ON)
I_D
20V
18mΩ
6A
Description
Advanced Power MOSFETs from APEC provide the designer with
D1
D2
the best combination of fast switching, ruggedized device design, ^G1
G2
ultra low on-resistance and cost-effectiveness.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
20
+8
6
4.8
20
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
125
Unit
℃/W
1
201210172