AP9930M Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – 2N AND 2P-CHANNEL ENHANCEMENT

Advanced Power
Electronics Corp.
AP9930M
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
33mΩ
6.3A
-30V
55mΩ
-5.1A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S
P2S
P1G
P2G
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
P1N1D
P2N2D
N1G
N1S
N2S
Rating
N-channel P-channel
30
-30
± 25
±25
6.3
-5.1
4.2
-3.4
20
-20
2.0
0.016
-55 to 150
-55 to 150
N2G
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200612032