AP9930GM-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP9930GM-HF
Halogen-Free Product
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
▼ RoHS Compliant
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
33mΩ
5.5A
-30V
55mΩ
-4.1A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S
P2S
P1G
P2G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
P1N1D
N1G
N1S
P2N2D
N2G
N2S
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
30
-30
±20
±20
5.5
-4.1
4.4
-3.3
20
-20
1.38
0.01
-55 to 150
-55 to 150
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Value
90
Unit
℃/W
Data and specifications subject to change without notice
1
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