AP9930AGM Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low On-resistance, Full Bridge Application on LCD Monitor Inverter

Advanced Power
Electronics Corp.
AP9930AGM
RoHS-compliant Product
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
▼ RoHS Compliant
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
35mΩ
5.2A
-30V
72mΩ
-3.5A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S
P2S
P1G
P2G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
P1N1D
P2N2D
Absolute Maximum Ratings
N1G
N1S
N2S
N2G
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
30
-30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
+20
+20
V
5.2
-3.5
A
4.1
-2.8
A
20
-20
A
P_D@T_A=25℃
Total Power Dissipation
1.38
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201004261