AP9926GM Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low Gate Charge,Surface mount package

Advanced Power
Electronics Corp.
AP9926GM
RoHS-compliant Product
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V gate drive
▼ Surface mount package
D2
D2
D1
D1
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
20V
30mΩ
6A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³,V_GS @ 4.5V
Continuous Drain Current³,V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201005194