AP9926GM-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free

Advanced Power
Electronics Corp.
AP9926GM-HF
Halogen-Free Product
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
AP9926 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
G1
designer with an extreme efficient device for use in a wide range
of power applications.
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³,V_GS @ 4.5V
Continuous Drain Current³,V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
20V
30mΩ
6A
D2
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201203284