AP9926GEO Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Surface Mount Package

Advanced Power
Electronics Corp.
AP9926GEO
RoHS-compliant Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
▼ Capable of 2.5V Gate Drive
▼ Low Drive Current
▼ Surface Mount Package
▼ RoHS Compliant
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
20V
28mΩ
4.6A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+ 12
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
125
Unit
℃/W
1
201208082