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AP9926GEO-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Surface Mount Package | |||
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Advanced Power
Electronics Corp.
AP9926GEO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
â¼ Low On-resistance
â¼ Capable of 2.5V Gate Drive
â¼ Low Drive Current
â¼ Surface Mount Package
â¼ RoHS Compliant & Halogen-Free
G2
S2
S2
D2
TSSOP-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
S1
D1
BVDSS
RDS(ON)
ID
D1
G1
G2
S1
20V
28mΩ
4.6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
20
+ 12
4.6
3.7
20
1
0.008
V
V
A
A
A
W
W/â
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
125
Unit
â/W
1
201501273
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