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AP9924AGO-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low on-resistance
Advanced Power
Electronics Corp.
AP9924AGO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Halogen Free & RoHS Compliant Product
BVDSS
RDS(ON)
ID
20V
22mΩ
5A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
S2
D
TSSOP-8
D
G1
S1
S1
D
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G1
G2
S1
Rating
20
+8
5
4
20
0.83
-55 to 150
-55 to 150
S2
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
200907161