AP9923GEO-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Small & Thin Package, Capable of 1.8V Gate Drive

Advanced Power
Electronics Corp.
AP9923GEO-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Small & Thin Package
▼ Capable of 1.8V Gate Drive
▼ RoHS Compliant & Halogen-Free
G2
S2
D2 ^S2
TSSOP-8
G1
S1
S1
D1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-12V
25mΩ
-7A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
- 12
+8
-7.0
-5.0
-30
1
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Rthj-L
Maximum Thermal Resistance, Junction-lead
Data and specifications subject to change without notice
Value
125
75
Unit
℃/W
℃/W
1
201009294