AP9922GEO-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Optimal DC/DC Battery Application

Advanced Power
Electronics Corp.
AP9922GEO-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
▼ RoHS Compliant & Halogen-Free
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
20V
16mΩ
6.4A
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
20
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
+8
V
6.4
A
5.1
A
30
A
1
W
0.01
W/℃
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
125
Unit
℃/W
1
201501275