AP9922AGEO-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application

Advanced Power
Electronics Corp.
AP9922AGEO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
▼ Halogen Free & RoHS Compliant Product
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BV_DSS
R_DS(ON)
I_D
Description
D1
AP9922A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
G1
G2
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
S1
20V
18mΩ
6A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
20
+8
6
4.8
20
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
125
Unit
℃/W
1
201301081