 English |
|
|
|
|
|
|
|
| AP9918GH Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Low on-resistance, Capable of 2.5V gate drive | |||
| |||
|
Advanced Power
Electronics Corp.
â¼ Low on-resistance
â¼ Capable of 2.5V gate drive
D
â¼ Low drive current
â¼ Surface mount package
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP9918GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
RDS(ON)
ID
20V
14mΩ
45A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
20
+12
45
20
140
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
oC
oC
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.0
62.5
110
Unit
oC/W
oC/W
oC/W
Data and specifications subject to change without notice
1
200901122
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese