AP98T03GP-HF Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP98T03GP/S-HF
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic _G
S
BV_DSS
R_DS(ON)
I_D
30V
2.8mΩ
200A
Description
AP98T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast _G
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
D
S
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP98T03GP) are available for low-profile
applications.
G _{D S TO-263(S)}
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. _Parameter
Rating
Units
V_DS
Drain-Source Voltage
30
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
+20
V
200
A
125
A
800
A
156
W
1.25
W/℃
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.8
40
62
Units
℃/W
℃/W
℃/W
1
201408255