AP95N25W Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP95N25W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ High Speed Switching
G
S
Description
AP95N25 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
BV_DSS
R_DS(ON)
I_D
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
250V
55mΩ
50A
TO-3P
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_DM
I_DR
I_DR(PULSE)
P_D@T_C=25℃
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current¹
Total Power Dissipation
Linear Derating Factor
Avalanche Current³
Storage Temperature Range
Operating Junction Temperature Range
Rating
250
±30
50
200
50
200
150
1.2
30
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.833
40
Data and specifications subject to change without notice
Units
V
V
A
A
A
A
W
W/℃
A
℃
℃
Units
℃/W
℃/W
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