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AP9579GJ-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP9579GJ-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product G
S
Description
AP9579 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-251 package is widely preferred for all commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
BVDSS
RDS(ON)
ID
GD
S
-60V
25mΩ
-45A
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-60
V
+20
V
-45
A
-28.7
A
-160
A
89.3
W
1.1
W
-55 to 150
oC
-55 to 150
oC
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
110
Units
oC/W
oC/W
1
201501272