AP9576GH-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP9576GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
BV_DSS
-60V
▼ Simple Drive Requirement
R_DS(ON)
100mΩ
▼ Fast Switching Characteristic
G
I_D
▼ RoHS Compliant & Halogen-Free
S
-14A
Description
AP9576 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
G
D _{S TO-252(H)}
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance. The through-hole version (AP9576GJ) is
G
D
S
TO-251(J)
available for low-profile applications.
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-60
V
+20
V
-14
A
-9
A
-45
A
36.8
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.4
62.5
110
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
201408272