AP9563GJ_09 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP9563GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-40V
40mΩ
-26A
G _{D S TO-252(H)}
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
G
D
such as DC/DC converters. The through-hole version (AP9563GJ) is
S
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
-40
+25
-26
-16
-64
39
0.31
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance Junction-ambient
Value
3.2
62.5
110
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200902133