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AP9561AGM-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP9561AGM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
S
SS
Description
AP9561A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for voltage conversion or switch applications.
BVDSS
RDS(ON)
ID
G
-40V
18mΩ
-9.2A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
VDS
Drain-Source Voltage
-40
VGS
Gate-Source Voltage
+20
ID@TA=25℃
Continuous Drain Current3, VGS @ 10V
-9.2
ID@TA=70℃
Continuous Drain Current3, VGS @ 10V
-7.4
IDM
Pulsed Drain Current1
-40
PD@TA=25℃
Total Power Dissipation
2.5
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201408292