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AP9477GK-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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Advanced Power
Electronics Corp.
AP9477GK-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
â¼ Lower Gate Charge
â¼ Fast Switching Characteristic
â¼ RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, low on-resistance
and cost-effectiveness.
BVDSS
RDS(ON)
ID
G
60V
90mΩ
4.1A
D
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
60
+20
4.1
3.3
20
2.8
0.02
1.8
-55 to 150
-55 to 150
V
V
A
A
A
W
W/â
mJ
â
â
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
â/W
1
201409173
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