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AP9467GJ-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Single Drive Requirement
Advanced Power
Electronics Corp.
AP9467GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Fast Switching Characteristics
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9467GJ) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
40V
11mΩ
52A
GD
S
TO-252(H)
G
D
S
TO-251(J)
Rating
40
+ 20
52
33
200
44.6
0.36
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.8
62.5
110
Unit
℃/W
℃/W
℃/W
1
201005314