AP9435GH-HF Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP9435GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
BV_DSS
R_DS(ON)
I_D
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
The TO-252/TO-251 package is widely used for commercial-industrial
application.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 30
±20
- 20
-13
-60
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
10
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
201017075-1/4