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AP9435GG-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic, Single Drive Requirement
Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ Single Drive Requirement
▼ RoHS Compliant & Halogen-Free G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP9435GG-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 4.2A
S
D
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 30
+20
- 4.2
-3.4
-20
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
℃/W
1
201010053