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AP92U03GH-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP92U03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low□on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP92U03GJ) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
3.8mΩ
75A
GDS
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
+20
V
75
A
57
A
300
A
50
W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
1
201501275