AP92T03GS Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Lower On-resistance

Advanced Power
Electronics Corp.
AP92T03GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
30V
4mΩ
80A
G _{D S TO-263(S)}
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
G
DS
Rating
30
+20
80
50
320
89
0.71
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Value
1.4
40
62
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200901123