AP90T03P-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP90T03P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP90T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
BV_DSS
R_DS(ON)
I_D
30V
4mΩ
75A
G
D
S
TO-220(P)
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
30
V
V_GS
I_D@T_c=25℃
I_D@T_c=100℃
I_DM
P_D@T_c=25℃
Gate-Source Voltage
Drain Current, V_GS@10V³
Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
+20
V
75
A
63
A
350
A
96
W
0.7
W/℃
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201501135