AP86T03GJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP86T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T03GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
BV_DSS
R_DS(ON)
I_D
G
D
S
GD
S
Rating
30
+20
75
55
300
75
-55 to 175
-55 to 175
30V
6.5mΩ
75A
TO-252(H)
TO-251(J)
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.0
62.5
110
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
200902262