AP8600P Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP8600P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
BV_DSS
R_DS(ON)
I_D3
80V
5mΩ
105A
Description
AP486040 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
D
S
TO-220(P)
The TO-220 package is widely preferred for all commercial-
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popular package.
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V_GS @ 10V³
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
80
V
+20
V
105
A
80
A
67
A
320
A
104
W
2
W
28.8
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
62
Units
℃/W
℃/W
1
201602013