AP85U03GH-HF_16 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP85U03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
30V
5.5mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings
.
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
E_AS
Single Pulse Avalanche Energy⁴
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
30
+20
75
56
220
60
0.48
28.8
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
201010256