AP85T10GR-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP85T10GR-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP85T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BV_DSS
R_DS(ON)
I_D
100V
8mΩ
125A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
125
120
88
300
300
2.42
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.5
62
Units
℃/W
℃/W
1
201210291