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AP75N07GSP-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP75N07GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75N07GP)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
75V
11mΩ
80A
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V4
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263(S)
Rating
75
+20
80
70
320
300
2
450
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
0.5
40
62
Units
℃/W
℃/W
℃/W
1
201212283