AP730P Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP730P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
Description
G
DS
TO-220
BV_DSS
R_DS(ON)
I_D
400V
1.0Ω
5.5A
The Advanced Power MOSFETs from APEC provide the
D
designer with the best combination of fast switching ,
ruggedized device design , low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
G
applications. The device is suited for switch mode power supplies ,DC-
S
AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
400
± 30
5.5
3.5
23
74
0.59
260
5.5
7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
1.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200219032