AP70SL1K4AI Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP70SL1K4AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% R_g & UIS Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP70SL1K4A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BV_DSS
R_DS(ON)
I_D3,4
700V
1.4Ω
3.2A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
700
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V^3,4
Drain Current, V_GS @ 10V^3,4
Pulsed Drain Current¹
+20
V
3.2
A
2.1
A
8.3
A
dv/dt
MOSFET dv/dt Ruggedness (V_DS = 0 …400V )
50
P_D@T_C=25℃
Total Power Dissipation
25
P_D@T_A=25℃
Total Power Dissipation
1.13
E_AS
Single Pulse Avalanche Energy⁵
27
dv/dt
Peak Diode Recovery dv/dt⁶
15
V/ns
W
W
mJ
V/ns
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201511041