AP6942GMT-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP6942GMT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
N-CH
P-CH
Description
S1 G1 S2 G2
AP6942 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
9mΩ
15.8A
-20V
23mΩ
-10.1A
D1
D1
D2
D2
The PMPAK ^® 5x6 package is special for voltage conversion
S1
application using standard infrared reflow technique with the
G1
backside heat sink to achieve the good thermal performance.
S2
G2 _{PMPAK® 5x6}
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
30
-20
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Drain Current³
Drain Current³
Pulsed Drain Current¹
+20
+12
V
15.8
-10.1
A
12.6
-8.1
A
60
40
A
P_D@T_A=25℃
Total Power Dissipation
3.57
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Rating
N-channel P-channel
7.2
6
35
35
Data and specifications subject to change without notice
Units
℃/W
℃/W
1
201501062