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AP6942GMT-HF Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Good Thermal Performance, Fast Switching Performance
Advanced Power
Electronics Corp.
AP6942GMT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
N-CH
P-CH
Description
S1 G1 S2 G2
AP6942 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
9mΩ
15.8A
-20V
23mΩ
-10.1A
D1
D1
D2
D2
The PMPAK ® 5x6 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
Absolute Maximum Ratings
S1
G1
S2
G2
PMPAK® 5x6
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
Drain-Source Voltage
30
-20
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
+20
+12
V
15.8
-10.1
A
12.6
-8.1
A
60
40
A
PD@TA=25℃
Total Power Dissipation
3.57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Rating
N-channel P-channel
7.2
6
35
35
Data and specifications subject to change without notice
Units
℃/W
℃/W
1
201208061