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AP6941GMT-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP6941GMT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
N-CH
P-CH
Description
S1 G1 S2 G2
AP6941 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
20V
16mΩ
12A
-20V
32mΩ
-8.8A
D1
D1
D2
D2
The PMPAK ® 5x6 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
Absolute Maximum Ratings
S1
G1
S2
G2
PMPAK® 5x6
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
+8
+8
V
ID@TA=25℃
Continuous Drain Current3, VGS @ 4.5V
12
-8.8
A
ID@TA=70℃
Continuous Drain Current3, VGS @ 4.5V
9.6
-7.1
A
IDM
Pulsed Drain Current1
30
-30
A
PD@TA=25℃
Total Power Dissipation
3.57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Rating
N-channel P-channel
10
10
35
35
Data and specifications subject to change without notice
Units
℃/W
℃/W
1
201210292