AP6924GEY_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP6924GEY
RoHS-compliant Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Low On-Resistance
▼ Fast Switching Characteristic
▼ Included Schottky Diode
K
S
D
SOT-26
A
A
G
BV_DSS
R_DS(ON)
I_D
20V
600mΩ
1A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, ruggedized
device design, ultra low on-resistance and cost-effectiveness.
G
D
K
S
A
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_KA
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
I_F
I_FM
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current³ (MOSFET)
Continuous Drain Current³ (MOSFET)
Pulsed Drain Current¹ (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current¹ (Schottky)
P_D@T_A=25℃
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
20
+6
1
0.8
8
0.5
2
0.9
0.9
-55 to 125
-55 to 125
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient ³ (MOSFET)
Maximum Thermal Resistance, Junction-ambient ³ (Schottky)
Value
110
110
Units
V
V
V
A
A
A
A
A
W
W
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201204253