AP6906GH-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Fast Switching Performance

Advanced Power
Electronics Corp.
AP6906GH-HF
Preliminary
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SDPAK^TM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
BV_DSS
R_DS(ON)
I_D
60V
40mΩ
16.4A
D1 (TAB1)
D2 (TAB2)
S1 _G1
S2
G2
SDPAK^TM
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Rating
60
+20
16.4
6.2
5
30
3
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
℃
℃
Value
6.0
42
Unit
℃/W
℃/W
1
20090716pre