AP6679GSP-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP6679GS/P-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-30V
9mΩ
-75A
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
-30
+25
-75
-50
-300
89
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
40
62
Unit
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200904164