AP6679BGP-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP6679BGP-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
R_DS(ON)
I_D
S
Description
AP6679B series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low package
cost contribute to the worldwide popular package.
G
D
S
-30V
9mΩ
-63A
TO-220(P)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. _Parameter
Rating
Units
V_DS
Drain-Source Voltage
-30
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
V
-63
A
-40
A
-240
A
54.3
W
2
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.3
62
Units
℃/W
℃/W
1
201409262AP