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| AP65SL600AR Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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Advanced Power
Electronics Corp.
AP65SL600AR
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ 100% Rg & UIS Test
D
â¼ Fast Switching Characteristic
â¼ Simple Drive Requirement
G
â¼ RoHS Compliant & Halogen-Free
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID3
700V
0.6Ω
7A
G
D
S
TO-262(R)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
ID@TC=25â
ID@TC=100â
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20
V
7
A
4.4
A
18
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 â¦400V )
50
PD@TC=25â
Total Power Dissipation
62.5
PD@TA=25â
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy4
36.7
dv/dt
Peak Diode Recovery dv/dt5
15
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2
62
Units
â/W
â/W
Data & specifications subject to change without notice
1
201505201
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