AP65SL190AI Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP65SL190AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% R_g & UIS Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP65SL190A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
V_DS @ T_j,max.
R_DS(ON)
I_D3,4
700V
0.19Ω
20A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
650
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
dv/dt
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
dv/dt
Gate-Source Voltage
Drain Current, V_GS @ 10V^3,4
Drain Current, V_GS @ 10V^3,4
Pulsed Drain Current¹
MOSFET dv/dt Ruggedness (V_DS = 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy⁵
Peak Diode Recovery dv/dt⁶
+20
20
12.3
48
50
34.7
1.92
300
15
V
A
A
A
V/ns
W
W
mJ
V/ns
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505211