AP60T10GS-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP60T10GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
BV_DSS
R_DS(ON)
I_D
100V
18mΩ
67A
Description
AP60T10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP60T10GP) are available for low-profile
applications.
G
D
S
GD _S
TO-220(P)
TO-263(S)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
100
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
+20
V
67
A
42
A
250
A
P_D@T_C=25℃
E_AS
Total Power Dissipation
Single Pulse Avalanche Energy³
167
W
288
mJ
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Value
0.75
40
62
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
201501155